Globalfoundries deal broadens FD-SOI, says Leti CEO

By Richard Wilson - Electronics Weekly, Oct. 28, 2015 – 

The platform incorporates software-controlled transistor body-biasing that are designed to provide trade-offs between power and performance.

"Delivering FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies," says Globalfoundries.

Earlier this year, Leti assigned a team of experts to Globalfoundries' wafer fab in Dresden, Germany to support ramp up of the platform.

The French semiconductor technology centre will provide circuit-design IP, including its back-bias feature for FD-SOI, which it claims improves performance at very low voltages with low leakage.

 Back