NANO16: FD-SOI moves towards 22nm and 14nm

Fifteen months into its course, the WAYTOGO FAST EU R&D project for promoting FD-SOI has achieved some significant targets the European Nanoelectronics Forum in Rome today was told.

By David Manners-Electronics Weekly, Nov. 23, 2016 – Boosters for 14 and 28 FD-SOI have been investigated and developed
. SOl wafers: +20% nFET loff/leff tradeoff
. STRASS technique: +1.6GPa demonstrated (stress level > sSOl)
. BOX Creep: +10% pFET lodLin
. First morphological M3DI integration based on MOS/MOS
. Soitec substrates pilot line implementation in line with schedule

Over the next four years, WAYTOGO FAST will work on the most suitable generations of FD-SOI technologies to answer market requirements.

At the end of the project (29 months) the pilot line should be ready to ramp in production with a qualified technology having its reliability demonstrated.

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