Samsung Shows EUV Design at ISSCC

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SAN JOSE, Calif., Nov. 13, 2017 – Samsung will describe a 7nm SRAM made with extreme ultraviolet lithography (EUV) at the International Solid-State Circuits Conference in February. Other ISSCC papers will detail memories, sensors and processors spanning everything from fast DRAMs to location trackers embedded in a boot.

Reinforcing its commitment earlier this year to be the first chip maker to use EUV, Samsung will describe a 0.026μm² SRAM bit cell in a 7nm process it aims to make available next year. The chip is the smallest SRAM described to date and uses a double-write driver to reduce minimum supply voltage.

Two papers on specialty memories should attract attention. TSMC will describe an 11 Mbit resistive RAM macro made in a 40nm process. It uses a new sense amplifier TSMC claims offers a 58 percent faster access speed as well as a new write scheme to improve endurance and retention.

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