Attopsemi's I-fuse OTP worked at 0.4V and 1uW read at 22nm process for IoT application

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Hsinchu City, Taiwan, Sept. 17, 2018 – 

Attopsemi's I-fuse OTP provides ultra-low read voltage/current, ultra-low program voltage/current, small size and wide temperature to enable 22nm process for a battery-less RFID tags in IoT applications

Attopsemi Technology Co., LTD, a leading OTP solution provider, announced today that it recently had One-Time Programmable (OTP) IP working at 0.4V and 1uW read for a battery-less 61GHz RFID tags application. Attopsemi, a fuse-based OTP IP provider, has I-fuse™ IP across all CMOS processes from 0.7um to 22nm, 7nm, and beyond, including G, LP, ULP, mixed signal, high voltage, BCD processes, and FD-SOI, etc.

“We sincerely appreciate the supports from the foundry and customer in developing our proprietary ultra-low power I-fuse™ OTP technology for RFID tags,” said Shine Chung, Chairman of Attopsemi. “This project has proved that we have innovative circuit techniques other than the innovative I-fuse™ techniques. After years of dedicated work, our I-fuse™ technology has finally found an application to prove I-fuse™ can provide low power read other than low power program feature. By using a fraction of program current and cell area, we highly expect our I-fuse™ can bring more substantial benefits to the ultra-low power IoT applications.”

About Attopsemi Technology

Founded in 2010, Attopsemi Technology is dedicated to developing and licensing fuse-based One-Time Programmable (OTP) IP to all CMOS process technologies from 0.7um to 7nm and beyond with various silicided polysilicon and HKMG technologies. Attopsemi provides the best possible OTP solutions for all merits in small size, high quality, high reliability, low power, high speed, wide temperature and high data security. Attopsemi's proprietary I-fuse™ OTP technologies have been proven in numerous CMOS technologies and in several silicon foundries.

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