CEA-LETI将在IEDM 2020展示3D技术、电力电子和量子计算方面的最新成果和见解

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www.eefocus.com, Nov. 10, 2020 – 

CEA-Leti will unveil its latest scientific results in 3D sequential integration for neural networks, 3D RRAM for in-memory computing and GaN-on-Si for power electronics at IEDM 2020, Dec. 12-16. The event will be held virtually because of the coronavirus pandemic.

Institute scientists are lead authors on four papers and contributing authors on five more that will be presented during the conference. Two of the four CEA-Leti papers discuss 3D technologies:

• "3D RRAMs with Gate-All-Around Stacked Nanosheet Transistors for In-Memory-Computing," by Sylvain Barraud
• Session 29.5: Thursday, Dec. 17 @ 9:40 am
• "High-Density Multi-Level-Cell 3D Sequentially Integrated 1T1R RRAM Array for Neural Networks," by Eduardo Esmanhotto
• Session 36.5: Friday, Dec. 18 @ 9:40 am

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